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- Adolfsson, Göran, 1981, et al.
(författare)
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Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:9, s. 093112-
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Tidskriftsartikel (refereegranskat)abstract
- Spectrally engineered semiconductor Fabry-Perot laser resonators are designed to enhance the optical feedback for selected longitudinal modes, which thereby require less gain for lasing. This is achieved by introducing refractive index perturbations along the length of the resonator. However,the physical realization of these resonators is a challenge because of very narrow tolerances; in particular the need for precise positioning of the end facets of the resonator in relation to the perturbations, and the excess propagation loss associated with the perturbations, has been a majorconcern. We report on a method to achieve high-quality end facet mirrors enabling precise positioning relative to the perturbations, the latter which are realized as lateral corrugations of the waveguide. Measurements show that the mirror quality is comparable to that of cleaved mirrorsand that the additional loss introduced by the perturbations adds
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| 2. |
- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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